By Topic

Theory and experiment of high-speed cross-gain modulation in semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Jin, X. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Keating, T. ; Chuang, S.L.

We present theory and experiment for the high-speed modulation response of a quantum-well (QW) laser in the presence of an external microwave modulated optical pump in the gain region. The model includes the effects of pump-induced stimulated recombination and cross-gain saturation. Expressions for the small-signal modulation response of the test laser under gain modulation are derived. We also present experimental results using a multiple-QW InGaAlAs Fabry-Perot (FP) laser at 1.552 /spl mu/m as the test laser and an external pump by a 1.542 /spl mu/m DFB laser. Comparison between electrical modulation and optical cross-gain modulation (XGM) of the test laser is also presented, which shows improvement of the modulation bandwidth by optical XGM. Our data show a reduction of carrier lifetime with increasing optical pumping, a shift of the test-laser threshold current, a change in the K factor, and a variation of the relaxation frequency with different pump powers. The experimental results agree very well with the theoretical results.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:36 ,  Issue: 12 )