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Modeling and measurement of longitudinal gain dynamics in saturated semiconductor optical amplifiers of different length

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4 Author(s)
Gutierrez-Castrejon, R. ; Inst. for Quantum Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland ; Schares, L. ; Occhi, L. ; Guekos, G.

A new frequency-domain wave-propagation model that includes a position- and time-dependent carrier lifetime and the effect of amplified spontaneous emission is introduced and used to accurately simulate recovery time experiments in 0.5- and 1.0-mm long semiconductor optical amplifiers. It is compared to a constant lifetime model at different saturation levels, showing better performance and consistency. The role of the amplified spontaneous emission in saturated amplifiers is also discussed.

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Quantum Electronics, IEEE Journal of  (Volume:36 ,  Issue: 12 )