Referenced Items are not available for this document.
The n-channel depletion-mode GaAs MOSFETs with a selective liquid phase chemical-enhanced oxidation method at low temperature by using metal as the mask (M-SLPCEO) are demonstrated. The proposed process can simplify one mask to fabricate GaAs MOSFET and grow reliable gate oxide films as well as side-wall passivation layers at the same time. The 1 /spl mu/m gate-length MOSFET with a gate oxide thickness of 35 nm shows a transconductance of 90 mS/mm and a maximum drain current density larger than 350 mA/mm. In addition, a short-circuit current gain cutoff frequency f/sub T/ of 6.5 GHz and a maximum oscillation frequency f/sub max/ of 18.3 GHz have been achieved from the 1 /spl mu/m/spl times/100 /spl mu/m GaAs MOSFET.
Published in:
Electron Device Letters, IEEE
(Volume:22
,
Issue:
1
)
Date of Publication: Jan. 2001
- Page(s):
- 2 - 4
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 6816092
- Digital Object Identifier :
- 10.1109/55.892425
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Jan. 2001
- Sponsored by :
- IEEE Electron Devices Society
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