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Browse Journals & Magazines > Electronics Letters ...> Volume:36 Issue:25 Help

Investigation into performance of TaN diffusion barrier against copper diffusion using XRD

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1 Author(s)
Teh, W.H. ; Singapore-Massachusetts Inst. of Technol., Singapore

A study of the reliability of a multilayer ionised metal plasma Cu/IMP TaN/plasma enhanced chemical vapour deposited SiO2/Si film structure with different thickness of TaN (10-30 nm) is presented. Formation of Cu5Ta11O30 and CuTa10 O26 peaks in the X-ray diffraction analysis when TaN fails suggests diffusion of Cu into oxygen-gettered tantalum. A 30 nm TaN barrier is an effective barrier for the Cu diffusion, sustaining 800°C annealing

Published in:
Electronics Letters  (Volume:36 ,  Issue: 25 )

Date of Publication: 7 Dec 2000

Page(s):
2105 - 2106
ISSN :
0013-5194
INSPEC Accession Number:
6798507
Digital Object Identifier :
10.1049/el:20001466
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
7 Dec 2000
Sponsored by :
Institution of Engineering and Technology

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