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Investigation into performance of TaN diffusion barrier against copper diffusion using XRD

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1 Author(s)
W. H. Teh ; Singapore-Massachusetts Inst. of Technol., Singapore

A study of the reliability of a multilayer ionised metal plasma Cu/IMP TaN/plasma enhanced chemical vapour deposited SiO2/Si film structure with different thickness of TaN (10-30 nm) is presented. Formation of Cu5Ta11O30 and CuTa10 O26 peaks in the X-ray diffraction analysis when TaN fails suggests diffusion of Cu into oxygen-gettered tantalum. A 30 nm TaN barrier is an effective barrier for the Cu diffusion, sustaining 800°C annealing

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Electronics Letters  (Volume:36 ,  Issue: 25 )