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Millimeter-wave diode-grid frequency doubler

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6 Author(s)
Jou, C.F. ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Lam, W.W. ; Chen, H.Z. ; Stolt, K.S.
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Monolithic diode grid were fabricated on 2-cm2 gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field illumination conditions. A second-harmonic conversion efficiency of 9.5% and output powers of 0.5 W were achieved at 66 GHz when the diode grid was pumped with a pulsed source at 33 GHz. This grid had 760 Schottky-barrier varactor diodes. The average series resistance was 27 Ω, the minimum capacitance was 18 fF at a reverse breakdown voltage of -3 V. The measurements indicate that the diode grid is a feasible device for generating watt-level powers at millimeter frequencies and that substantial improvement is possible by improving the diode breakdown voltage

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:36 ,  Issue: 11 )