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Room temperature operation of an electrically injected single-defect photonic bandgap microcavity surface emitting laser

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8 Author(s)
J. Sabarinathan ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; W. D. Zhou ; B. Kochman ; E. Berg
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We report here 0.9 μm lasing in a p-n junction 2D photonic band gap (PBG) defect mode microcavity surface-emitting laser with electrical injection. The GaAs based device heterostructure is grown by metal-organic vapor phase epitaxy (MOVPE). It consists of an n+ GaAs contact layer, an n-type lower GaAs/Al0.8Ga0.2As distributed Bragg reflector (DBR) mirror, an undoped λ cavity (λ=0.94 μm) region with two 70 Å pseudomorphic In0.l5Ga0.85As wells in the middle and p-type AlGaAs and contact layers on the top. n- and p-type Al0.96Ga 0.04As layers are also inserted on the respective sides of the cavity region for eventual lateral wet-oxidation during the processing of the device. The photoluminescence emission peak from the quantum wells is observed at 940 nm

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Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE  (Volume:1 )

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