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Ultra-low power monolithically integrated InGaAs/GaAs phototransceiver incorporating a modulated barrier photodiode and a quantum dot microcavity LED

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5 Author(s)
O. Qasaimeh ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; W. Zhou ; P. Bhattacharya ; D. Huffaker
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We report the design and performance characteristics of GaAs-based low-power phototransceivers which offer large optical gain and very low power dissipation. In these monolithically integrated circuits we have integrated modulated barrier photodiodes with quantum dot-based microcavity LEDs. Quantum dots promise higher quantum efficiency, higher power, together with a more directed emission profile

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Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE  (Volume:1 )

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