High power linear arrays of 1.9 /spl mu/m laser diodes

We describe the development of high-power single-aperture InGaAsP-InP laser diodes at 1.9 /spl mu/m emitting 1 W CW and 2.2 W pulsed optical power. Linear arrays of 10 of these diodes gave 5 W CW and 11 W pulsed optical power. The InGaAs-InGaAsP-InP broadened waveguide (BW) lasers were grown by using a Riber gas-source molecular beam epitaxy (GSMBE) reactor. The structure consists of a two-step undoped confinement heterostructure or waveguide sandwiched between highly doped InP cladding regions. The QWs are composed of compressively strained InGaAs layers.