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High power linear arrays of 1.9 μm laser diodes

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5 Author(s)
Vermaak, J.S. ; Sensors Unlimited, Princeton, NJ, USA ; Sugg, A. ; Olsen, G.H. ; Gokhale, M.
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We describe the development of high-power single-aperture InGaAsP-InP laser diodes at 1.9 μm emitting 1 W CW and 2.2 W pulsed optical power. Linear arrays of 10 of these diodes gave 5 W CW and 11 W pulsed optical power. The InGaAs-InGaAsP-InP broadened waveguide (BW) lasers were grown by using a Riber gas-source molecular beam epitaxy (GSMBE) reactor. The structure consists of a two-step undoped confinement heterostructure or waveguide sandwiched between highly doped InP cladding regions. The QWs are composed of compressively strained InGaAs layers

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Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE  (Volume:1 )

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