By Topic

The MOS-depletion-mode-thyristor: a new MOS controlled bipolar power device

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Baliga, B.J. ; Gen. Electr. Co., Schenectady, NY ; Chang, H.R.

A novel MOS gate-controlled thyristor device is discussed. In these depletion-mode thyristors (DMTs), the depletion region formed by the application of a gate bias across an MOS gate is utilized to divert the current flowing in a thyristor element into a transistor element. This process turns off the device because the transistor element derives its base current from the thyristor element. The DMT offers the following attributes: (1) low forward voltage drop in the on-state at high current densities due to conduction via the thyristor element; (2) high-input-impedance MOS gate control, and (3) equivalent performance for complementary (n- and p-channel) devices. Experimental verification of the operation of the DMT devices has been achieved by the fabrication of 600-V devices using a trench (UMOS) gate technology. The forward conduction current density of the device was measured to be five times higher than that of the insulated-gate bipolar transistor at a forward drop of 1 V. Computer simulation of the forward conduction of the DMT indicates that its performance approaches that of a one-dimensional thyristor. The MOS gate controlled current turn-off under high-voltage DC switching has been demonstrated at current densities in excess of 5000 A/cm2

Published in:

Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 12 )