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Schottky metal-semiconductor-metal photodetectors on GaN films grown on sapphire by molecular beam epitaxy

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7 Author(s)
Wang, S. ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Li, T. ; Reifsnider, J.M. ; Yang, B.
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We report high-performance back-to-back Schottky metal-semiconductor-metal photodetectors fabricated on GaN epitaxial layers grown by molecular beam epitaxy. The photodetectors exhibit very low dark current (<1 pA at 30 V) and high external quantum efficiency (>70%). Medici simulation of the depletion region width indicated an absence of photoconductive gain. The temporal response has also been characterized.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:36 ,  Issue: 11 )

Date of Publication:

Nov. 2000

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