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Study of AlN/SiO2 as dielectric layer for SiC MOS structures

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6 Author(s)
Biserica, O. ; Centro Nacional de Microelectron., Barcelona, Spain ; Godignon, P. ; Jorda, X. ; Montserrat, J.
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Silicon dioxide (SiO2) has shown to be performance limited for SiC application at high temperature and high electric fields due to its low dielectric constant. Aluminium Nitride (AlN) could be a valuable alternative thanks to its high dielectric constant and good thermo-mechanical matching with SiC. A study on an MOS capacitor has been performed in order to evaluate the AlN capability as a gate and passivation dielectric layer for SiC devices. Direct deposition of AlN layers on the semiconductor has resulted in a very high leakage current and unstable C-V characteristics due to interface and bulk charges. In a second phase, we have fabricated an MNOS (or MIS) SiC-SiO2-AlN capacitor on p-type 6H-SiC substrates. In this case, the extracted fixed charge and interface trap densities are in the range of the values obtained with SiC-SiO2 structures. C-V characteristics exhibit low hysteresis unlike the SiC-SiO2-Si 3N4 structure. Low leakage current is measured and this proposed dielectric layer could support high electric field

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Semiconductor Conference, 2000. CAS 2000 Proceedings. International  (Volume:1 )

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