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Photoluminescence study of hexagonal GaN heteroepitaxial layers grown by molecular beam epitaxy on Al2O3, Si and GaAs substrates

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5 Author(s)
Pavelescu, E.-M. ; Inst. of Electron. Structure & Laser, Found. for Res. & Technol.-Hellas, Heraklion-Crete, Greece ; Androulidaki, M. ; Cengher, M. ; Georgakilas, A.
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The low temperature photoluminescence (PL) characteristics of GaN thin films grown by radio-frequency plasma-assisted molecular beam epitaxy on Al2O3, GaAs and Si substrates have been investigated. A different dominating transition characterized the PL spectrum of each substrate type, indicating the significant role of the substrate in the control of the GaN epilayer's properties

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Semiconductor Conference, 2000. CAS 2000 Proceedings. International  (Volume:1 )

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