Cart (Loading....) | Create Account
Close category search window
 

Photoluminescence study of hexagonal GaN heteroepitaxial layers grown by molecular beam epitaxy on Al2O3, Si and GaAs substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Pavelescu, E.-M. ; Inst. of Electron. Structure & Laser, Found. for Res. & Technol.-Hellas, Heraklion-Crete, Greece ; Androulidaki, M. ; Cengher, M. ; Georgakilas, A.
more authors

The low temperature photoluminescence (PL) characteristics of GaN thin films grown by radio-frequency plasma-assisted molecular beam epitaxy on Al2O3, GaAs and Si substrates have been investigated. A different dominating transition characterized the PL spectrum of each substrate type, indicating the significant role of the substrate in the control of the GaN epilayer's properties

Published in:

Semiconductor Conference, 2000. CAS 2000 Proceedings. International  (Volume:1 )

Date of Conference:

2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.