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Thermal behavior and stability of room-temperature continuous Al xGa1-xAs-GaAs quantum well heterostructure lasers grown on Si

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5 Author(s)
Hall, D.C. ; Electr. Eng. Res. Lab., Illinois Univ., Urbana, IL ; Deppe, D.G. ; Matyi, R.J. ; Shichijo, H.
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Thermal characteristics of p-n AlxGa1-xAs-GaAs quantum-well heterostructure (QWH) diode lasers grown on Si substrates have been investigated. Continuous operation at 300 K for over 10 h has been demonstrated for lasers mounted with the junction side away from the heat sink (junction-up) and the heat dissipated through the Si substrate. Junction-up diodes grown on Si substrates had measured thermal impedances 38% lower than those grown on GaAs substrates, with further reductions possible. Measured values were consistent with calculated values for these structures. Low sensitivity of the lasing current to temperature has also been observed, with T0 values as high 338°C

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Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 12 )