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Electrostatic discharge (ESD) is responsible for more than 25% of semiconductor device and chip damage each year. This paper focuses on an ESD event resulting from the charge being transferred from a human body to an integrated circuit (i.e. the human body model, HBM). In particular, the study provides simulation and experimental results to determine the main mechanism governing the failure of MOS devices subjected to the HBM stress. Based on this mechanism, the correct pulse needed to measure the HBM ESD characteristics using the transmission line pulse (TLP) technique is also determined and recommended.
Date of Conference: 26-28 Sept. 2000