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High-resistivity silicon p-i-n diodes for detection of ionising radiation

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3 Author(s)
Slysz, W. ; Inst. of Electron. Technol., Warsaw ; Ryc, L. ; Wegrzecki, M.

Silicon p-i-n photodiodes for measuring nuclear radiation, with a large surface area (5×5 mm2), a thick (380 μm) active layer and a very thin dead layer (0.13 μm), have been fabricated by diffusion from a boron doped silicon layer (BDS). The photodiodes have been tested using α-particles from 241Am and X-rays from laser plasmas

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Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

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