By Topic

The effect of heterojunction properties of the diode temperature sensors on low temperature current transfer and temperature response curves

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Shwarts, Yu.M. ; Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine ; Kondrachuk, A.V. ; Shwarts, M.M. ; Spinar, L.I.
more authors

A new type of the silicon cryogenic diode temperature sensors (DTSs) with advanced technical characteristics has been developed on the base of highly doped n++-p+ structures. For expansion of opportunities of the practical applications of the DTSs with the predicted performance characteristics we are experimentally and theoretically investigated the current transfer in the DTSs at helium temperatures. It is proposed that mechanisms of non-ohmic Mott's conductivity in the base of diode and the tunnel-limited current through the heterojunction barrier between the n- and p-parts of the impurity band determine the current-voltage characteristics (CVCs) and the temperature response curves (TRCs) of the DTSs at helium temperatures

Published in:

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Date of Conference: