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Highly reliable CW strained layer InGaAs/GaAs (λ=980 nm) SCH SQW lasers fabricated by MBE

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5 Author(s)
P. Sajewicz ; Inst. of Electron. Technol., Warsaw, Poland ; T. Piwonski ; K. Reginski ; B. Mroziewicz
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Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980 nm, broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation. Threshold current densities of the order of Jth≈280 A/cm2 (for a resonator length L=700 μm) and differential efficiency η=0.4 W/A (41%) were obtained. The wall-plug efficiency was 38%. Theoretical estimations of these quantities obtained by numerical modelling of devices were Jth=210 A/cm and η=0.47 W/A respectively

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Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

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