Investigation of interface formation and charge properties of MIS structures Al-Dy_xO_y-n-InP(100)

Al-Dy_xO_y-n-InP (100) structures with dysprosium oxide films Dy_xO_y of 30 to 70 nm thickness have been studied. The influence of the film formation conditions on the Dy_xO_y-n-InP (100) interface charge properties are discussed. InP MIS structures with low effective charge density N_ss~10¹¹ cm^-2, interface trap density N_it~3·10¹¹ cm^-2 eV ^-1 and capacitance-voltage characteristic hysteresis less than 0.3 V have been obtained. It is shown that DyP_xO_y transition layer formation plays a predominant role in obtaining MIS structures with a very good compatible gate dielectric material for InP MISFET's