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Physical and structural characterization of NiO thin films for gas detection

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6 Author(s)
I. Hotovy ; Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia ; J. Huran ; L. Spiess ; P. Siciliano
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We have studied physical and structural properties of NiO thin films produced by reactive DC magnetron sputtering of a Ni target in an Ar/O2 mixture. The oxygen content in the gas mixture varied from 15 to 45%. The thin film deposition was controlled by the target voltage. Depending on the oxygen content, the deposited films have both amorphous and polycrystalline structures and the Ni/O ratio ranges between 0.71 and 1.02. The NiO thin films were tested in order to investigate their response to NH3 and CO in the interval 50-200 ppm at the different operating temperatures. The maximum value of CO response (30% to 200 ppm) was obtained at an operating temperature of 420°C for sample prepared in oxide-sputtering mode

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Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

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