By Topic

Physical and structural characterization of NiO thin films for gas detection

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Hotovy, I. ; Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia ; Huran, J. ; Spiess, L. ; Siciliano, P.
more authors

We have studied physical and structural properties of NiO thin films produced by reactive DC magnetron sputtering of a Ni target in an Ar/O2 mixture. The oxygen content in the gas mixture varied from 15 to 45%. The thin film deposition was controlled by the target voltage. Depending on the oxygen content, the deposited films have both amorphous and polycrystalline structures and the Ni/O ratio ranges between 0.71 and 1.02. The NiO thin films were tested in order to investigate their response to NH3 and CO in the interval 50-200 ppm at the different operating temperatures. The maximum value of CO response (30% to 200 ppm) was obtained at an operating temperature of 420°C for sample prepared in oxide-sputtering mode

Published in:

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Date of Conference:

2000