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A Raman study of NiOx films for gas sensors applications

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6 Author(s)
Srnanek, R. ; Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia ; Hotovy, I. ; Malcher, V. ; Vincze, A.
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NiOx films were prepared by dc reactive magnetron sputtering in an Ar+O2 mixed atmosphere. These films were investigated by Raman spectroscopy and SIMS. It was confirmed that as we increased the ratio of oxygen in the oxygen/ argon mixture to 30-40%, the composition of the layers approached the Ni2O3 composition. Annealing of the layers also led to a change in composition from the nearly perfect (NiO) to a stoichiometry with an excess of O2(~Ni2O3)

Published in:

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Date of Conference:

2000