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Temperature dependence simulation of electrophysical properties of silicon carbide

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5 Author(s)
Agueev, O.A. ; Dept. of Microelectron. & ULSIC Technol, Taganrog State Univ. of Radio Eng., Rostov-Don, Russia ; Svetlichny, A.M. ; Izotovs, D.A. ; Melnikov, A.V.
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At this work was calculated the temperature dependences of Fermi level situation, carrier concentration and conductivity in SiC polytypes (3C, 4H, 6H) for different impurities concentration and type of conductivity for the wide temperature range. The calculations were carried out with the help of numerical solution of equation electroneutrality. We took into account the multicharging of impurities and compensating impurity influence. The results of calculations helped to make precise temperature dependences of Fermi level situation, carrier concentration and conductivity of SiC and to raise calculations accuracy for simulation characteristics of SiC of electronic devices and analyse experimental data of CV characteristics, DLTS and noise diagnostics

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Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

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