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Homogeneity of InGaAs/InP nanostructures

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8 Author(s)
Piester, D. ; Inst. fur Halbleitertech., Tech. Univ. Carolo-Wilhelmina, Braunschweig, Germany ; Ivanov, A.A. ; Bakin, A.S. ; Klaffs, T.
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Atomic-force microscopy is applied to wet-chemically etched cleaved facets of InGaAs/InP nanoheterostructures. This technique allows the precise determination of process parameters relevant to advanced quantum devices realized by metal-organic vapor-phase epitaxy (MOVPE). We present data on thickness homogeneity and growth rates. We give evidence for the high quality of InGaAs/InP nanostructures grown by MOVPE

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Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

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