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Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range

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4 Author(s)
Darmo, J. ; Max-Planck-Inst. fur Radioastron., Bonn, Germany ; Schaffer, F. ; Forster, A. ; Kordos, P.

Several topics related to the performance of a photoconductive mixer based on low-temperature-grown MBE GaAs are addressed. Approaches to a reduction of charge carrier lifetime and an improvement of the heat dissipation from structure are discussed. Relevant experimental data obtained for Be-doped GaAs are presented

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Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

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