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Resonant cavity LED with InAs/GaAs active region

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8 Author(s)
Kvietkova, J. ; Fac. of Phys. & Earth-Sci., Leipzig Univ., Germany ; Kovac, J. ; Rheinlander, B. ; Hardt, S.
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We present a resonant cavity LED with an InAs monolayer active region embedded in an AlAs/AlGaAs vertical resonant cavity. In comparison to the structures without a resonator but with the same active region the realized resonant cavity LED exhibited enhanced external quantum efficiency and decreased linewidth. Using the monolayer active region allows a wavelength redshift of the emission spectrum of more than 45 nm while keeping the external quantum efficiency and linewidth at approximately the same value as for the resonant cavity LED with monolayer-free active region

Published in:

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Date of Conference:

2000