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Ridge-waveguide InAs/GaAs lasers

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6 Author(s)
L. Kuna ; Microelectron. Dept., Slovak Univ. of Technol. & Int. Laser Centre, Bratislava, Slovakia ; F. Uherek ; J. Kovac ; J. Jakabovic
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We report on the reduction of current spreading of InAs/GaAs lasers by using ridge-waveguide geometry. For the investigation of current spreading, lasers with various ridge widths 5, 10, 20 and 50 μm are prepared. The laser properties are experimentally studied by the light output versus current characteristics (L-I) and near field patterns (NFP). Threshold current densities (Jth) as a function of ridge width are compared to oxide-stripe geometry lasers with the same material structure. Finally, lasers with ridge-waveguide geometry show a reduction of total Jth for all ridge widths. Furthermore, the fundamental zero-order mode TEM00 is achieved for 10 μm ridge width

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Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

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