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Design and technology of InGaP/GaAs DHBTs

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2 Author(s)
Rezazadeh, A.A. ; Dept. of Electron. Eng., King''s Coll., London, UK ; Sotoodeh, M.

A comparison of the DC and RF performance of InGaP/GaAs based SHBT and DHBT is made. These devices have been fabricated using a planar self-aligned technology using ion implant isolation. It was demonstrated that DHBT is the most promising device for power amplifier applications. Finally a new collector design approach for minimising the base transit time in DHBTs is suggested.

Published in:

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Date of Conference:

16-18 Oct. 2000