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Simplified simulations of GaAs MESFET's with semi-insulating substrate compensated by deep levels

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4 Author(s)
K. Horio ; Dept. of Electr. Eng., Shibaura Inst. of Technol., Tokyo, Japan ; Y. Fuseya ; H. Kusuki ; H. Yanai

Current-voltage characteristics of GaAs MESFETs (with p-butter layers) on semi-insulating substrates compensated by deep levels are simulated by two-carrier and one-carrier models. For a thicker p-buffer layer or for higher acceptor density in the substrate, the drain current becomes lower because the substrate current is reduced. The one-carrier model also gives reasonable results for a case with a hole-trap substrate. Small-signal parameters of GaAs MESFETs on various types of substrates are also simulated. For a thicker p-buffer layer or for higher acceptor densities in the semi-insulating substrates, the substrate current is reduced, and both transconductance and cutoff frequency become higher. It is concluded that, to utilize the high-speed and high-frequency performance of GaAs MESFETs, acceptor densities in the substrate should be made high

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:10 ,  Issue: 10 )