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Hydrodynamic simulation of impact-ionization effects in p-n junctions

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3 Author(s)
Quade, W. ; Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy ; Rudan, M. ; Scholl, E.

Using the hydrodynamic model of semiconductor devices, the authors simulate an abrupt p-n junction under strong reverse bias, accounting for impact ionization by means of electron and hole generation rates dependent on the carrier temperature. They demonstrate the influence of impact ionization as a cooling mechanism on the mean energy and velocity of the carriers, and show that the ionization coefficients αn and αp are spatially retarded with respect to the normally used electric-field dependent ones; this results in larger multiplication factors Mn and Mp. The reason for this effect is traced back to the increased impact-ionization probability of secondary generated carriers having the chance to travel through a larger portion of the high-field region. This is shown qualitatively by discussing the impact ionization integrals, and is estimated quantitatively through the simulation

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:10 ,  Issue: 10 )