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Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's

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6 Author(s)
Venturi, F. ; Dept. of Electron., Parma Univ., Bologna, Italy ; Sangiorgi, E. ; Brunetti, R. ; Quade, W.
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Monte Carlo simulations of high-energy electrons and holes in Si n-MOSFETs are presented. Key features of this work include the use of a suitable silicon model for carrier transport at high electric fields, an original impact ionization model, and sophisticated numerical techniques to speed up the calculation. The case of submicrometer Si n-MOSFETs is considered as a relevant application

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:10 ,  Issue: 10 )

Date of Publication:

Oct 1991

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