By Topic

SOI materials for MOEMS obtained by silicon direct bonding technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Dunare, C. ; Inst. of Microtechnol., Bucharest, Romania ; Cernica, I. ; Popescu, D. ; Popescu, A.
more authors

In this paper we propose a new technology to obtain SOI (silicon-on-insulator) substrates. This new technology is based on silicon direct bonding techniques using hydrophilic surfaces. The obtained substrates can be used in MOEMS for ingression of light sources. This method is high versatile and provides a high degree flexibility in materials integration

Published in:

Semiconductor Conference, 2000. CAS 2000 Proceedings. International  (Volume:2 )

Date of Conference: