Cart (Loading....) | Create Account
Close category search window

A Ka band extended resonance power amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Martin, A.L. ; M/A-COM, Roanoke, VA, USA ; Mortazawi, Amir

A Ka-band power amplifier based on an extended resonance power combining technique is presented. This technique enables the design of planar microstrip power amplifiers that are much more compact than those based on traditional quarter-wave hybrid designs. The extended resonance power combining amplifier presented here combines four GaAs MESFETs at 32.8 GHz using a planar structure that is more than 40% smaller than a quarter-wave hybrid power combining amplifier design, while the power-combining efficiency is 92%. The measured small-signal gain at 32.8 GHz is 4.6 dB, and at 1-dB compression the output power is 23.3 dBm with a power-added efficiency of 12.8%.

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:10 ,  Issue: 11 )

Date of Publication:

Nov. 2000

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.