Cart (Loading....) | Create Account
Close category search window
 

A vertically integrated resonant tunneling device with multiple negative differential resistances

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Potter, R.C. ; Allied-Signal Aerosp. Co., Columbia, MD ; Lakhani, A.A. ; Hier, H.S. ; Beyea, D.
more authors

It was recently shown that connecting two resonant tunneling diodes (RTDs) in parallel so that the bias across them was offset resulted in a current-voltage (I-V) characteristic with two separate negative differential resistance (NDR) regions. More recently, two discrete InAlAs/InGaAs RTDs were combined in tandem to obtain near-ideal room-temperature I-V characteristics that had two well-defined NDR regions. Using molecular-beam epitaxy, the authors have extended this idea by vertically integrating five InAlAs/InGaAs double-barrier RTDs in sequence to obtain a vertically integrated diode (VID) that had five NDR regions. The five tunneling structures were separated from each other by 500-Å n+ InGaAs layers that which destroyed electron coherence between the tunneling regions, so that each resonant-tunneling structure switched sequentially with increasing bias. The VID has been used to demonstrate a multilevel memory element that has five distinct voltage states that can be set by using small current pulses. The VID was also used in a circuit to generate the parity of an 11-bit word

Published in:

Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 12 )

Date of Publication:

Dec 1988

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.