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A vertically integrated resonant tunneling device with multiple negative differential resistances

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5 Author(s)
Potter, R.C. ; Allied-Signal Aerosp. Co., Columbia, MD ; Lakhani, A.A. ; Hier, H.S. ; Beyea, D.
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It was recently shown that connecting two resonant tunneling diodes (RTDs) in parallel so that the bias across them was offset resulted in a current-voltage (I-V) characteristic with two separate negative differential resistance (NDR) regions. More recently, two discrete InAlAs/InGaAs RTDs were combined in tandem to obtain near-ideal room-temperature I-V characteristics that had two well-defined NDR regions. Using molecular-beam epitaxy, the authors have extended this idea by vertically integrating five InAlAs/InGaAs double-barrier RTDs in sequence to obtain a vertically integrated diode (VID) that had five NDR regions. The five tunneling structures were separated from each other by 500-Å n+ InGaAs layers that which destroyed electron coherence between the tunneling regions, so that each resonant-tunneling structure switched sequentially with increasing bias. The VID has been used to demonstrate a multilevel memory element that has five distinct voltage states that can be set by using small current pulses. The VID was also used in a circuit to generate the parity of an 11-bit word

Published in:

Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 12 )

Date of Publication:

Dec 1988

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