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High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation

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8 Author(s)
H. Maher ; Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada ; D. W. DiSanto ; M. W. Dvorak ; G. Soerensen
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The authors demonstrate high-performance heterostructure field-effect transistors (HFETs) with mesa isolation achieved by a recently developed UV-assisted, batch processing compatible, wet etching process. HFETs with a 0.2 μm gate feature peak cutoff frequencies of fT=43 GHz and fmax=98 GHz for a piezoelectric HFET grown on a sapphire substrate by molecular beam epitaxy. The transistors feature low gate diode leakage currents and display no sensitivity to visible light

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Electronics Letters  (Volume:36 ,  Issue: 23 )