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Browse Journals & Magazines > Electronics Letters ...> Volume:36 Issue:23 Help

High Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance

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4 Author(s)
Chiu, H.C. ; Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan ; Yang, S.C. ; Chan, Y.-J. ; Kuo, J.M.

Al0.5In0.5P/In0.15Ga0.85 As doped-channel HFETs (DCFETs) are expected to have a high linearity and a high breakdown voltage for microwave power device applications due to the improvement of a larger ΔEc (0.45eV) and a wide bandgap AlInP Schottky layer. The device, biased at Vds=3.0 V and operated at 2.4 GHz, provided an output power density of 209 mW/mm. A power-added efficiency of 59% and a linear power gain of 17 dB. Two-tone measurement reveals that third-order intermodulation at an input power of 0 dBm is -29 dBc and the output intercept point (OIP3) is 30.4 dSm for devices with a 1 mm wide gate

Published in:
Electronics Letters  (Volume:36 ,  Issue: 23 )

Date of Publication: 9 Nov 2000

Page(s):
1968 - 1969
ISSN :
0013-5194
INSPEC Accession Number:
6779762
Digital Object Identifier :
10.1049/el:20001371
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
9 Nov 2000
Sponsored by :
Institution of Engineering and Technology

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