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Long wavelength InGaAs-InGaAlAs-InP diode lasers grown by solid-source molecular-beam epitaxy

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7 Author(s)
Kuang, G.K. ; Walter Schottky Inst., Tech. Univ. of Munich, Germany ; Bohm, G. ; Graf, N. ; Grau, M.
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The authors have fabricated InGaAs-InGaAlAs-InP strained quantum well lasers with wavelengths as long as 2208 nm using solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 370 A/cm2 at 20°C and characteristic temperature of 53 K have been achieved

Published in:

Electronics Letters  (Volume:36 ,  Issue: 22 )