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Modification of drift-diffusion model for short base transport

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2 Author(s)
J. P. Katamarkovic ; Fac. of Electron. Eng., Nis Univ., Serbia ; N. D. Jankovic

A modified drift-diffusion model for the simulation of quasiballistic transport in short-base bipolar transistors has been proposed. It includes the effects of base end velocity overshoot and reduction in the minority-carrier diffusion coefficient. Numerical results show good agreement with those obtained by Monte Carlo simulation

Published in:

Electronics Letters  (Volume:36 ,  Issue: 24 )