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Modelling of direct tunnelling for thin SiO2 film on n-type Si(100) by Wentzel, Kramers, Brillouin method

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4 Author(s)
N. Matsuo ; Dept. of Electr. & Electron. Eng., Yamaguchi Univ., Ube, Japan ; Y. Takami ; Y. Kitagawa ; T. Miyoshi

The modelling of direct tunnelling (DT) through thin SiO2 films on n-type Si(100) using the WKB method is discussed. The emission of the electron from the quantised energy level at the SiO2/Si interface and the accumulation of the electron at the interface are assumed. By calculating the DT currents using this model, the reproducibility of the I-V characteristics is examined

Published in:

Electronics Letters  (Volume:36 ,  Issue: 24 )