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7.5 kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

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9 Author(s)
G. Simin ; Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA ; X. Hu ; N. Ilinskaya ; A. Kumar
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A fast high-power solid-state switch based on a novel large periphery multigate AlGaNiGaN metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) over 4H-SiC substrates is demonstrated. For a device with 1 mm periphery and 10 μm gate-drain spacing, 7.5 kW/mm2 of switched power with on-state resistance of 75 mW×mm2 is obtained. The pulse response of the MOSHFET switch exhibited a rise-time <5 ns in pulsemode operation

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Electronics Letters  (Volume:36 ,  Issue: 24 )