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Continuous wave operation of 1.26 μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition

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9 Author(s)
Sato, S. ; Res. & Dev. Center, Ricoh Co. Ltd., Yokohama, Japan ; Nishiyama, N. ; Miyamoto, T. ; Takahashi, T.
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Electrically pumped near 1.3 μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition are demonstrated for the first time. The threshold current and voltage under continuous wave operation of a 10×10 μm2 oxide aperture device were 7.6 mA and 2.8 V, respectively. The output power exceeded 0.1 mW and the slope efficiency was ~0.1 W/A

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Electronics Letters  (Volume:36 ,  Issue: 24 )