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Power amplifier/low noise amplifier RF switch

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3 Author(s)
Tze Kiu Lee ; Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China ; Wing Shing Chan ; T. Y. M. Siu

Front-end RF switches commonly use PIN diodes as the switching element. A novel RF switch using the existing front-end power amplifier and low noise amplifier to give better performance with reduced component count and lower cost is demonstrated

Published in:

Electronics Letters  (Volume:36 ,  Issue: 24 )