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Oxide breakdown decrease by oxide growth projection of implantation-caused stacking faults - a characterization case study using atomic force microscopy

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2 Author(s)
Jacob, P. ; IHP Institute for Semiconductor Physics ; Hoeppner, K.

First Page of the Article

Published in:

Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on

Date of Conference:

1996