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Effect of starting SOI material quality on low-frequency noise characteristics in partially depleted floating-body SOI MOSFETs

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3 Author(s)
Ushiki, T. ; NEC Corp., Kawasaki, Japan ; Ishino, H. ; Ohmi, T.

The low-frequency noise properties of partially-depleted (PD) floating-body silicon-on-insulator (SOI) MOSFETs fabricated on two types of commercially available bonded SOI (BSOI) wafers were experimentally investigated. In the pre-kink region, a drain bias dependent Lorentzian-like noise has been observed for UNIBOND wafers, while a pure 1/f noise has been achieved for ELTRAN wafers. Our analysis shows that the charge fluctuation induced by emission process through intermediate-level centers in the drain-depletion region causes the instability in the body voltage, resulting in the pre-kink excess noise for UNIBOND wafers.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 12 )