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Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes

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5 Author(s)
Liu, C.W. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Lee, M.H. ; Chen, Miin-Jang ; Ching-Fuh Lin
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An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900/spl deg/C, as compared to 1000/spl deg/C. The X-ray reflectivity revealed that the oxide grown at 900/spl deg/C has rougher interface than that grown at 1000/spl deg/C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of /spl sim/10/sup -6/ was obtained using Al electrodes.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 12 )

Date of Publication:

Dec. 2000

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