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Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology

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5 Author(s)
Tahui Wang ; Device, Technol. & Modeling Dept., Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan ; Diaz, C.H. ; Boon-Khim Liew ; Sun, J.Y.-C.
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This letter presents a deep submicron CMOS process that takes advantage of phosphorus transient enhanced diffusion (TED) to improve the hot carrier reliability of 3.3 V input/output transistors. Arsenic/phosphorus LDD nMOSFETs with and without TED are fabricated. The TED effects on a LDD junction profile, device substrate current and transconductance degradation are evaluated. Substantial substrate current reduction and hot carrier lifetime improvement for the input/output devices are attained due to a more graded n/sup -/ LDD doping profile by taking advantage of phosphorus TED.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 12 )

Date of Publication:

Dec. 2000

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