Referenced Items are not available for this document.
A novel multiple-self-aligned fabrication process is developed for recessed gate microwave static induction transistors (SITs) in silicon carbide (SiC). This process is demonstrated by fabricating 4H-SiC SITs having record f/sub T/ of 7 GHz.
Published in:
Electron Device Letters, IEEE
(Volume:21
,
Issue:
12
)
Date of Publication: Dec. 2000
- Page(s):
- 578 - 580
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 6786109
- Digital Object Identifier :
- 10.1109/55.887471
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec. 2000
- Sponsored by :
- IEEE Electron Devices Society
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