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Air-gaps in 0.3 μm electrical interconnections

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9 Author(s)
Kohl, Paul A. ; Sch. of Chem. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Bhusari, D.M. ; Wedlake, M. ; Case, C.
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A copper/air-gap interconnection structure using a sacrificial polymer and SiO/sub 2/ in a damascene process has been demonstrated. The air-gap occupies the entire intralevel volume with fully densified SiO/sub 2/ as the planar interlevel dielectric. The copper was deposited by physical vapor deposition and planarized by chemical-mechanical planarization. The Ta/Cu barrier/seed layer was deposited by physical vapor deposition; the bulk copper was electrochemically deposited. The resulting structure has an effective intralevel dielectric constant of 2.19.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 12 )