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An S-parameter technique for substrate resistance characterization of RF bipolar transistors

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6 Author(s)
Harker, S.D. ; Philips Semicond., Albuquerque, NM, USA ; Havens, R.J. ; Paasschens, J.C.J. ; Szmyd, D.
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An off-state S-parameter technique characterizes the NPN substrate resistance-capacitance network. The results are useful in designing RF test structures, modeling substrate effects for circuit simulation, and characterizing perimeter and area capacitance components from a single device

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Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

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