Referenced Items are not available for this document.
A SiGe HBT, fabricated by means of selective epitaxy, and high-Q RF passive components have been integrated into a 0.35 μm BiCMOS process. The HBT features an fT of 50 GHz and fmax of 80 GHz at VBC=2 V. The npn transistors are integrated in a 0.35 μm CMOS process with poly resistors, MIM capacitors and thick metal 4 on chip spiral inductors
Published in:
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Date of Conference: 2000
- Page(s):
- 106 - 109
- Meeting Date :
- 24 Sep 2000-26 Sep 2000
- ISSN :
- 1088-9299
- Print ISBN:
- 0-7803-6384-1
- INSPEC Accession Number:
- 6826545
- Conference Location :
- Minneapolis, MN
- Digital Object Identifier :
- 10.1109/BIPOL.2000.886184
- Product Type:
- Conference Publications
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