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A low-cost modular SiGe BiCMOS technology and analog passives for high-performance RF and wide-band applications

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25 Author(s)
R. Tang ; AT&T Bell Labs., Orlando, FL, USA ; C. Leung ; D. Nguyen ; T. Hsu
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We present a low-cost 0.25 μm SiGe BiCMOS technology that is being manufactured in an 8-inch production line. The technology includes modules for super-self-aligned (SSA) SiGe transistors, poly resistors, metal-oxide-metal (MOM) capacitors and thick-metal inductors added to a CMOS core process without any change to the CMOS process. With the independently developed modules and a high-energy implanted collector buried layer, SiGe bipolar devices with a maximum fT of 72 GHz and fmax of 116 GHz, and thick metal inductors with Q⩾15 have been produced. Using this technology, IC chips fabricated have demonstrated essential optical network interface functions with 4:1 MUX and 1:4 DEMUX circuits operated at 10 Gb/s, and limiting amplifiers performing at 20 Gb/s

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Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

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